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  january 2011 doc id 15853 rev 4 1/23 23 STB22NM60N, stf22nm60n, sti22nm60n stp22nm60n, stw22nm60n n-channel 600 v, 0.2 ? , 16 a mdmesh? ii power mosfet in d 2 pak, to-220fp, i 2 pak, to-220 and to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these devices are made using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max. i d STB22NM60N 650 v < 0.22 ? 16 a stf22nm60n 650 v < 0.22 ? 16 a sti22nm60n 650 v < 0.22 ? 16 a stp22nm60n 650 v < 0.22 ? 16 a stw22nm60n 650 v < 0.22 ? 16 a 1 3 1 2 3 1 2 3 d2pak to-220fp to-220 1 2 3 to-247 1 2 3 i2pak !-v $ ' 3 table 1. device summary order codes marking package packaging STB22NM60N 22nm60n d2pak tape and reel stf22nm60n to-220fp tu b e sti22nm60n i2pak stp22nm60n to-220 stw22nm60n to-247 www.st.com
contents stb/f/i/p/w22nm60n 2/23 doc id 15853 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
stb/f/i/p/w22nm60n electrical ratings doc id 15853 rev 4 3/23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak i2pak to-220 to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 16 16 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 10 10 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 64 64 (1) a p tot total dissipation at t c = 25 c 125 30 w dv/dt (3) 3. i sd 16 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak i2pak to-220 to-247 to-220fp r thj-case thermal resistance junction-case max. 14.17c/w r thj-amb thermal resistance junction- ambient max. 62.5 50 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max. 30 c/w t j maximum lead temperature for soldering purpose 300 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj
electrical characteristics stb/f/i/p/w22nm60n 4/23 doc id 15853 rev 4 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8 a 0.2 0.22 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1330 84 4.6 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 181 - pf r g gate input resistance f=1 mhz open drain - 4.7 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 16 a, v gs = 10 v (see figure 18) - 44 6 25 - nc nc nc
stb/f/i/p/w22nm60n electrical characteristics doc id 15853 rev 4 5/23 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r(v) t d(off) t f(i) turn-on delay time voltage rise time turn-off delay time fall time v dd = 300 v, i d = 8 a, r g = 4.7 ?, v gs = 10 v (see figure 17) - 11 18 74 38 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 16 64 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 16 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a, di/dt = 100 a/s v dd = 60 v (see figure 19) - 296 4 26.8 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 19) - 350 4.7 27 ns c a
electrical characteristics stb/f/i/p/w22nm60n 6/23 doc id 15853 rev 4 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220, d2pak, i2pak figure 3. thermal impedance for to-220, d 2 pa k , i 2pa k figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $       6 $3 6  ! /perationinthisareais ,imitedbyma x 2 $3on  ? s  ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v ) $       6 $3 6  ! /perationinthisareais ,imitedbyma x 2 $3on  ? s  ? s ms ms 4j ? # 4c ? # 3ingle pulse  !-v ) $       6 $3 6  ! /perationinthisareais ,imitedbyma x 2 $3on  ? s  ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v
stb/f/i/p/w22nm60n electrical characteristics doc id 15853 rev 4 7/23 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $       6 $3 6  !    6 6 6 6 '3 6     !-v ) $    6 '3 6  !            6 $3 6 !-v 6 '3       1 g n# 6      6 $$ 6 ) $ !         6 $3 6 '3 !-v 2 $3on       ) $ ! /hm             6 '3 6 !-v #       6 $3 6 p&   #iss #oss #rss !-v % oss       6 $3 6  ? *          !-v
electrical characteristics stb/f/i/p/w22nm60n 8/23 doc id 15853 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 i d =250 a am06410v1 r d s (on) 1.70 1. 3 0 0.90 0.50 -50 0 t j (c) (norm) -25 2.10 75 25 50 100 125 i d = 8 a am06411v1 "6 $33   4 *  ? # norm              ) $ m! !-v
stb/f/i/p/w22nm6 0n test circuits doc id 15853 rev 4 9/23 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive wavefo rm figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb/f/i/p/w22nm60n 10/23 doc id 15853 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb/f/i/p/w22nm60n package mechanical data doc id 15853 rev 4 11/23 figure 23. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stb/f/i/p/w22nm60n 12/23 doc id 15853 rev 4 table 10. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb/f/i/p/w22nm60n package mechanical data doc id 15853 rev 4 13/23 figure 24. d2pak (to-263) drawing 0079457_r
package mechanical data stb/f/i/p/w22nm60n 14/23 doc id 15853 rev 4 table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stb/f/i/p/w22nm60n package mechanical data doc id 15853 rev 4 15/23 figure 25. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb/f/i/p/w22nm60n 16/23 doc id 15853 rev 4 table 12. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
stb/f/i/p/w22nm60n package mechanical data doc id 15853 rev 4 17/23 figure 26. to-247 drawing 0075 3 25_f
package mechanical data stb/f/i/p/w22nm60n 18/23 doc id 15853 rev 4 table 13. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e 10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
stb/f/i/p/w22nm60n package mechanical data doc id 15853 rev 4 19/23 figure 27. i2pak (to-262) drawing 00049 8 2_rev_h
packaging mechanical data stb/f/i/p/w22nm60n 20/23 doc id 15853 rev 4 5 packaging mechanical data figure 28. d2pak footprint (a) table 14. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a. all dimension ar e in millimeters 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb/f/i/p/w22nm60n packa ging mechanical data doc id 15853 rev 4 21/23 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb/f/i/p/w22nm60n 22/23 doc id 15853 rev 4 6 revision history table 15. document revision history date revision changes 02-jul-2009 1 first release. 18-feb-2010 2 document status promoted from preliminary data to datasheet. 27-aug-2010 3 new package, mechanical data has been inserted: i2pak. 05-nov-2011 4 some value changed in table 5: on /off states .
stb/f/i/p/w22nm60n doc id 15853 rev 4 23/23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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