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january 2011 doc id 15853 rev 4 1/23 23 STB22NM60N, stf22nm60n, sti22nm60n stp22nm60n, stw22nm60n n-channel 600 v, 0.2 ? , 16 a mdmesh? ii power mosfet in d 2 pak, to-220fp, i 2 pak, to-220 and to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these devices are made using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max. i d STB22NM60N 650 v < 0.22 ? 16 a stf22nm60n 650 v < 0.22 ? 16 a sti22nm60n 650 v < 0.22 ? 16 a stp22nm60n 650 v < 0.22 ? 16 a stw22nm60n 650 v < 0.22 ? 16 a 1 3 1 2 3 1 2 3 d2pak to-220fp to-220 1 2 3 to-247 1 2 3 i2pak ! - v $ ' 3 table 1. device summary order codes marking package packaging STB22NM60N 22nm60n d2pak tape and reel stf22nm60n to-220fp tu b e sti22nm60n i2pak stp22nm60n to-220 stw22nm60n to-247 www.st.com
contents stb/f/i/p/w22nm60n 2/23 doc id 15853 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 stb/f/i/p/w22nm60n electrical ratings doc id 15853 rev 4 3/23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak i2pak to-220 to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 16 16 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 10 10 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 64 64 (1) a p tot total dissipation at t c = 25 c 125 30 w dv/dt (3) 3. i sd 16 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak i2pak to-220 to-247 to-220fp r thj-case thermal resistance junction-case max. 14.17c/w r thj-amb thermal resistance junction- ambient max. 62.5 50 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max. 30 c/w t j maximum lead temperature for soldering purpose 300 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj electrical characteristics stb/f/i/p/w22nm60n 4/23 doc id 15853 rev 4 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8 a 0.2 0.22 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1330 84 4.6 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 181 - pf r g gate input resistance f=1 mhz open drain - 4.7 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 16 a, v gs = 10 v (see figure 18) - 44 6 25 - nc nc nc stb/f/i/p/w22nm60n electrical characteristics doc id 15853 rev 4 5/23 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r(v) t d(off) t f(i) turn-on delay time voltage rise time turn-off delay time fall time v dd = 300 v, i d = 8 a, r g = 4.7 ?, v gs = 10 v (see figure 17) - 11 18 74 38 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 16 64 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 16 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a, di/dt = 100 a/s v dd = 60 v (see figure 19) - 296 4 26.8 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 19) - 350 4.7 27 ns c a electrical characteristics stb/f/i/p/w22nm60n 6/23 doc id 15853 rev 4 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220, d2pak, i2pak figure 3. thermal impedance for to-220, d 2 pa k , i 2pa k figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v stb/f/i/p/w22nm60n electrical characteristics doc id 15853 rev 4 7/23 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $ 3 6 ! 6 6 6 6 ' 3 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! 6 $ 3 6 ' 3 ! - v 2 $ 3 o n ) $ ! / h m 6 ' 3 6 ! - v # 6 $ 3 6 p & |